This set of Electrical engineering Multiple Choice Questions & Answers (MCQs) focuses on “Power Electronics”. These questions are chosen from a collection of most authoritative and best reference books on Electrical engineering. Our aim is to prepare an individual for competitive exams like NTS, GAT, ECAT, University and College entrance exams, Jobs and interviews. One should practice our MCQS to assimilate Power Electronics comprehensively.
Identical to line voltage in a VSI
Identical to line current in VSI
Identical to phase voltage in VSI
Identical to phase voltage in CSI
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Dependent on the load current
Dependent on the voltage
Dependent on both the load current and load voltage behind the short circuit current
Independent on both the load current and load voltage
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Suppressing emissions
Reducing the efficiency of the coupling path
Reducing the susceptibility of the receptor
All of these
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Silicon has large leakage current than germanium
Silicon has small leakage current than germanium
Silicon has small leakage voltage than germanium
Silicon has large leakage voltage than germanium
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Two SCR’s in parallel opposition
Two SCR’s in series
Three SCR’s in series
Four SCR’s in series
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Duty ratio only
Frequency only
Duty ratio and frequency
Duty ratio, frequency and time delay
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Electrical power developed in armature – copper losses
Mechanical power input – iron and friction losses
Electrical power developed in armature – iron and copper losses
Mechanical power input – iron and friction losses – copper losses
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It will rotate at the same speed as that with its field winding closed
It will rotate at less speed as that with its field winding closed
It will rotate at dangerously high speed
None of these
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Load survey method
Mathematical method
Statistical method
Economic parameters
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Frequencies above 20 kHz
Frequencies above 1000 kHz
Frequencies less than 10 Hz
50 Hz frequency
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Cmin = V / ( Vr L f2 )
Cmin= ( 1 – D ) V / ( Vr L f2 )
Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
Cmin= ( 1 – 2 D ) V / 42 ( Vr L f2 )
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Metal – oxide semiconductor field effect transistor
Molybdenum – oxide semiconductor field effect transistor
Metal – oxide silicon field effect transistor
Metal – oxide semiconductor field effect transmitter
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Flyback capacitor
Flyback resistor
Flyback transformer
Flyback transistor
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Large number of reactive component
Low stress on switch
Low stress on capacitor
None of these
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Only minority carriers
Only majority carriers
Both minority and majority carriers
None of these
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